YESPOWERTECHNIX Co., Ltd. is Korea's first specialized SiC power semiconductor IDM company. In the explosive increase in the SiC power semiconductor market, mass production sales are in progress in South Korea, and we are preparing to make the leap to become a global star company. For that purpose, we are building the infrastructure and investing approximately 14 billion scale dedicated equipment and facilities for SiC power semiconductors for manufacturing SiC to commercialize. In addition, we have obtained various certifications and patents such as IATF 16949 certification for competitive inventory, 6 patents are currently registered, and 17 cases are under registration.

SiC Power MOSFET, Diode

SiC Power MOSFET, Diode의 경우 기존 Si 기반의 소자에 비해 넓은 에너지 밴드폭, 높은항복, 전압특성, 빠른 포화전자속도 등으로 고온과 높은 전압에서 소자의 안전성과 높은 동작주파수에서의 동작이 가능하다.

Key Features

  • 1. Silicon Carbide Diode (Bare Die)
  • · 650-Volt Schottky Rectifier
  • · Shorter recovery time
  • · High-speed switching possible
  • · High-Frequency Operation
  • · Temperature-Independent Switching Behavior
  • · Extremely Fast Switching
  • · Positive Temperature Coefficient on VF
  • 2. Silicon Carbide Diode package
  • · 6-60Ampare various current rating (custmized)
  • · 650-1200 Volt Schottky Rectifier
  • · Shorter recovery time
  • · High-speed switching possible
  • · High-Frequency Operation
  • · Temperature-Independent Switching Behavior
  • · Extremely Fast Switching
  • · Positive Temperature Coefficient on VF
  • 3. Silicon carbide MOSFET
  • · 1200 Volt power Metal Oxide Semiconductor Field Effect transistor
  • · Low On-Resistance (40mΩ,160mΩ)
  • · High-Speed Switching
  • · High-Frequency Operation
  • · Fast Reverse Recovery
  • · Easy to Parallel & Simple to Drive
  • · Halogen Free, RoHS Compliant

적용처 : 자동차, 파워서플라이, 에너지, 모터 드라이브, LED